Integrated semiconductor laser element
文献类型：专利
| 作者 | YOSHIDA TOMOHIKO; MORIMOTO TAIJI; KANEIWA SHINJI; YAMAGUCHI MASAHIRO |
| 发表日期 | 1989-01-12 |
| 专利号 | JP1989008691A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated semiconductor laser element |
| 英文摘要 | PURPOSE:To prevent the injection of a current, to endure against a high output and to easily integrate a low output laser element and a high output laser element by increasing the thickness of a current constriction layer near the end face of a semiconductor laser element. CONSTITUTION:A cutout 8 is formed by a normal photolithography method on a P-type GaAs substrate An N-type GaAs current constriction layer 2 is so buried as to completely bury the cutout 8 on the substrate, and further grown. Then, two parallel grooves 9 and a cutout 8 are formed in parallel again by the photolithography method. A P-type GaAlAs clad layer 3, a P-type GaA As active layer 4 having a composition of smaller energy gap from that of the clad layer, an N-type GaAlAs clad layer 5, and an N-type GaAs cap layer 6 are sequentially grown thereon. Eventually, after electrodes are formed, an element isolating groove 7 is etched to the layer 2 to isolate two laser oscillators. |
| 公开日期 | 1989-01-12 |
| 申请日期 | 1987-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85074]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | YOSHIDA TOMOHIKO,MORIMOTO TAIJI,KANEIWA SHINJI,et al. Integrated semiconductor laser element. JP1989008691A. 1989-01-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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