Manufacture of semiconductor laser device
文献类型：专利
| 作者 | HIROSE MASANORI; NAITO HIROKI; SUGINO TAKASHI; YAMAMOTO ATSUYA; YOSHIKAWA AKIO |
| 发表日期 | 1988-06-15 |
| 专利号 | JP1988142885A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To form a vertical plane having few crystal defects forming a cavity mirror to a double hetero-structure section by wet-etching multilayer crystal layers by shaping double hetero-structure including an active layer and the multilayer crystal layers by an etching control layer onto one conductivity type substrate. CONSTITUTION:An N-type GaAs blocking layer 3 is grown onto a P-type GaAs substrate 2, and a P-type AlyGa1-yAs clad layer 4, an AlxGa1-xAs active layer 5, an N-type AlyGa1-yAs clad layer 6, an N-type GaAs electrode forming layer 7 and an AlzGa1-zAs etching control layer 11 are grown in succession. An etching rate v0 in the horizontal direrection in the vicinity of the double hetero- structure interface in the GaAs layer 7 on a double hetero-structure section must be optimized in order to perpendicularly etch the double hetero-structure section. A GaAs layer is formed onto double hetero-structure as the electrode forming layer 7. An AlGaAs layer 10 is attached onto the GaAs layer so that the v0 of the GaAs layer satisfies conditions, and an etching control layer is shaped by the two layers. Accordingly, a perpendicular cavity mirror surface can be formed. |
| 公开日期 | 1988-06-15 |
| 申请日期 | 1986-12-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85075]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HIROSE MASANORI,NAITO HIROKI,SUGINO TAKASHI,et al. Manufacture of semiconductor laser device. JP1988142885A. 1988-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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