Semiconductor laser device and method of manufacturing the same
文献类型：专利
| 作者 | MAKITA, KOUJI; YOSHIKAWA, KENJI; KASHIMA, TAKAYUKI; ADACHI, HIDETO |
| 发表日期 | 2005-06-02 |
| 专利号 | US20050117619A1 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and method of manufacturing the same |
| 英文摘要 | The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic, and is comprised of the following: an n-type GaAs substrate 101; an n-type AlGaInP cladding layer 102 formed on the n-type GaAs substrate 101; a non-doped quantum well active layer 103; a p-type AlGaInP first cladding layer 104; a p-type GaInP etching stop layer 105; a p-type AlGaInP second cladding layer 106; a p-type GaInP cap layer 107; a p-type GaAs contact layer 108; an n-type AlInP block layer 109, has a ridge portion and convex portions formed on the both sides of the ridge portion, and the p-type GaAs contact layer 108 is formed on the ridge portion only. |
| 公开日期 | 2005-06-02 |
| 申请日期 | 2004-11-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85077]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | MAKITA, KOUJI,YOSHIKAWA, KENJI,KASHIMA, TAKAYUKI,et al. Semiconductor laser device and method of manufacturing the same. US20050117619A1. 2005-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。