Cleavage method
文献类型：专利
| 作者 | KONNO KUNIAKI |
| 发表日期 | 1987-07-28 |
| 专利号 | JP1987171175A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Cleavage method |
| 英文摘要 | PURPOSE:To cleave a crystal easily without damaging the crystal by interposing a noncohesive film having an area the same as or wider than the crystal between an adhesive face and the crystal as a sheet. CONSTITUTION:A laser diode wafer 1 held to films 6, 7, 11 is placed on a jig 8 with a rectangular corner section 8a, and positioned at a position where the corner section 8a and a scribing position 4 in the wafer 1 coincide. Force shown in the arrow is applied to the laser diode wafer 1, the wafer is cloven, array-shaped laser diodes 9, 9.9 are acquired, and these laser diodes are removed from the adhesive and noncohesive films 6, 7, 11 once. One or a plurality of the array-shaped laser diodes 9, 9.9 are arranged onto the noncohesive film 11 disposed onto the adhesive film 6 in the direction of formation of an array, and coated with the noncohesive film 7 again, and the array-shaped laser diodes are held and fixed by the films 6, 7, 1 The wafer is cloven through the same method as mentioned above, thus obtaining laser diode chips 10, 10.10. |
| 公开日期 | 1987-07-28 |
| 申请日期 | 1986-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85086]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KONNO KUNIAKI. Cleavage method. JP1987171175A. 1987-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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