Semiconductor laser device
文献类型：专利
| 作者 | TANAKA TOSHIO; NARA AIICHIRO |
| 发表日期 | 1989-04-14 |
| 专利号 | JP1989096984A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the reliability and service life of a semiconductor laser device by forming a dislocation getter layer having a large crystal defect density on the part of a crystal layer grown partly on or on a semiconductor substrate, and forming an active region on a section isolated from the getter layer. CONSTITUTION:A dislocation getter layer 8 having a large crystal defect density is formed on the part of an epitaxially grown crystal layer, i.e., on the part between P-type AlGaAs clad layers 2 on a P-type GaAs substrate A region having many dislocations is intentionally formed on the part of the epitaxial layer, and an active region 10 for generating a laser oscillation is formed on the part of a P-type GaAs active layer 3 isolated from the layer 8. The dislocation generally very improves crystallinity near the dislocation by its gettering effect. Since the dislocation in a crystal is concentrated only in the layer 8, the crystallinity in the region 10 can be effectively improved. As a result, the reliability and the service life of a semiconductor laser device can be sufficiently enhanced. |
| 公开日期 | 1989-04-14 |
| 申请日期 | 1987-10-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85091]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO,NARA AIICHIRO. Semiconductor laser device. JP1989096984A. 1989-04-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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