Cleavage of semiconductor laser
文献类型：专利
| 作者 | ISHIGURO NAGATAKA; FURUIKE SUSUMU |
| 发表日期 | 1987-12-23 |
| 专利号 | JP1987296580A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Cleavage of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the cleavage method of a semiconductor laser, through which a cleavage plane is hardly damaged and which has excellent workability, by forming an edge flaw at a cleavage-plane forming position and holding an adhesive first sheet onto an extensible second sheet while the second sheet is bonded and fixed to the first sheet. CONSTITUTION:Edge flaws 2 in predetermined length are shaped at the positions of cleavage of the peripheral section of an epitaxial wafer 1, the upper surface of the wafer is coated with a sheet sheet 3, and the lower surface side of the wafer 1 is joined and fastened to a slightly thick sheet 4 by pressure sensitive adhesives 5. The sheet 4 is positioned on the upper side, the wafer 1 is held onto an extensible sheet 6 having excellent elasticity, and a hammer 7 for striking is pressed against the sheet 4 from a position vertical to a wafer surface, thus easily cleaving the wafer. Accordingly, a superior cleavage plane can be formed extremely easily with excellent reproducibility. |
| 公开日期 | 1987-12-23 |
| 申请日期 | 1986-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85094]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ISHIGURO NAGATAKA,FURUIKE SUSUMU. Cleavage of semiconductor laser. JP1987296580A. 1987-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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