Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thicker than lower optical waveguide layer
文献类型：专利
| 作者 | HAYAKAWA, TOSHIRO; FUKUNAGA, TOSHIAKI |
| 发表日期 | 2001-09-13 |
| 专利号 | US20010021212A1 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thicker than lower optical waveguide layer |
| 英文摘要 | In a semiconductor laser device including having an index-guided structure and oscillating in a fundamental transverse mode, a lower cladding layer, a lower optical waveguide layer, a quantum well layer, an upper optical waveguide layer, and a current confinement structure are formed in this order. The thickness of the upper optical waveguide layer is smaller than the thickness of the lower optical waveguide layer. In addition, the sum of the thicknesses of the upper and lower optical waveguide layers may be 0.5 micrometers or greater. Further, the distance between the bottom of the current confinement structure and the upper surface of the quantum well layer may be smaller than 0.25 micrometers. |
| 公开日期 | 2001-09-13 |
| 申请日期 | 2001-03-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85099]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | HAYAKAWA, TOSHIRO,FUKUNAGA, TOSHIAKI. Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thicker than lower optical waveguide layer. US20010021212A1. 2001-09-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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