Manufacture of semiconductor laser device
文献类型：专利
| 作者 | TAMURA HIDEO; SAGARA MINORU; IIDA SEIJI; KURIHARA HARUKI |
| 发表日期 | 1983-11-08 |
| 专利号 | JP1983191485A |
| 著作权人 | TOKYO SHIBAURA DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To improve the yield rate of production for the EH laser of the titled semiconductor laser device by a method wherein the substrate surface on which crystal is grown is protruded from the stopping mask of liquid-phase crystal growth, and a number of stripe-formed windows having equal width are provided piriodically on the whole surface of the substrate. CONSTITUTION:The stripe-formed windows of s=3mum in width are formed on the whole surface of an n-GaAs substrate 20 at an interval of u=10mum. An n- Ga0.55Al0.45As clad layer 25, an n-Ga0.87Al0.13As active layer 26, a P-Ga0.55Al0.45 As clad layer 27 and a p-GaAs ohmic layer 28 are successively grown on said substrate. Then, SiO2 29 of 1500Angstrom is deposited on the substrate, and a main stripe window is formed by removing the SiO2 located at the upper part of an optional crystal grown part 30 in stripe form (width approx.=2mum) using a fluoric acid etchant. The laser chip shown in the diagram is formed by vapor-depositing an electrode metal (n-side: Av-Gu/Au, P-side: Cv/Au) on the processed wafer, and cut out after it has been alloyed. Through these procedures, the difficulties encountered in the technique used heretofore in crystal growth on the main stripe window are not observed at all now. |
| 公开日期 | 1983-11-08 |
| 申请日期 | 1982-05-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85108]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA DENKI KK |
| 推荐引用方式 GB/T 7714 | TAMURA HIDEO,SAGARA MINORU,IIDA SEIJI,et al. Manufacture of semiconductor laser device. JP1983191485A. 1983-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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