Semiconductor laser device
文献类型：专利
| 作者 | AOYAGI, TOSHITAKA; SAKAINO, GO |
| 发表日期 | 2005-02-03 |
| 专利号 | US20050025210A1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | An n-InP second upper cladding layer is laid on a p-InP lower cladding layer while an active layer having upper and lower boundary surfaces that are uniformly flat in an optical waveguide direction is interposed therebetween. A diffraction layer having a phase-shifted structure provided in the direction of optical waveguide is interposed between the lower cladding layer and the active layer, or between the second upper cladding layer and the active layer. The length L of the diffraction grating layer in the direction of the optical waveguide is taken as L≦260 μm; a mean coupling factor κ of a diffraction grating layer is taken as κ≧130 cm−1; and κL satisfies 5.6>κL>3.0. |
| 公开日期 | 2005-02-03 |
| 申请日期 | 2004-08-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85114]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | AOYAGI, TOSHITAKA,SAKAINO, GO. Semiconductor laser device. US20050025210A1. 2005-02-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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