Semiconductor laser device
文献类型：专利
| 作者 | HONDA KAZUO; WATABE SHOZO |
| 发表日期 | 1987-08-01 |
| 专利号 | JP1987176183A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To avoid the surface oxidation of AlGaAs in fabrication, to eliminate design restrictions of an element and to improve reliability, in a GaAs-AlGaAs semiconductor laser device, by introducing GaxIn1-xAsyP1-y (0.5<=x<0<=y<1) having approximately the same functions as AlGaAs. CONSTITUTION:On a N-GaAs substrate 1, an N-AlGaAs clad layer 2, a GaAs (or AlGaAs) active layer 3, a P-AlGaAs layer, e.g., P-Al0.45Ga0.55As clad layer 4 are sequentially grown. For example, Ga0.51In0.49P layer 31, whose lattice is aligned with the layer 4, is thinly grown. An N-GaAs layer is grown on the layer 31, and its center is selectively etched. Thus an N-GaAs current narrowing layer 5 is form. Then a P-AlGaAs clad layer 6 and a P-GaAs cap layer 7 are grown. Electrodes 8 and 9 are deposited and formed, and a DH laser device 32 is formed. When the selective etching is performed for growing the current narrowing layer 5, the layers exposed on the surface are the layer 5 and the layer 31, when do not include Al. Therefore the surface oxidation is avoided. Thereafter, the clad layer 6 and the cap layer 7 are formed without impairing crystalline property. Since the layer 31 acts as an etching blocking layer, the etching controllability is improved. |
| 公开日期 | 1987-08-01 |
| 申请日期 | 1986-01-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85126]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | HONDA KAZUO,WATABE SHOZO. Semiconductor laser device. JP1987176183A. 1987-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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