Semiconductor laser device
文献类型：专利
| 作者 | NAITO HIROKI; KUME MASAHIRO; SHIMIZU YUICHI; ITO KUNIO; YOSHIKAWA AKIO |
| 发表日期 | 1989-05-22 |
| 专利号 | JP1989128583A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To implement high output power, by blocking current injection at a part in the vicinity of an end surface with a first semiconductor layer as a current blocking layer, providing a second semiconductor layer as an active layer at a part other than the vicinity of the end surface on a third semiconductor layer as a light guide layer, and providing a structure, wherein the vicinity of the end surface without the semiconductor layer is embedded with a fifth semiconductor layer, which does not absorb light. CONSTITUTION:A first clad layer 5 comprising P-type Ga0.59Al0.41As is formed on a current blocking layer 3. A light guide layer 6 comprising P-type Ga0.69 Al0.31As, an active layer 7 comprising Ga0.92Al0.08As, an N-type Ga0.59Al0.41As layer 8 and N-type Ga0.85Al0.15As layer 9 are sequentially laminated on the layer 5. A second clad layer comprising N-type Ga0.59Al0.41As is formed. A contact layer 11 comprising N-type GaAs is formed on the layer 10. The current blocking layer 3 is formed beneath the first clad layer 5 in the vicinity of an end surface. Therefore, a current is not injected into said part. The active layer 7 is not present in the vicinity of the end surface. The second clad layer 10, in which energy gap is large and light is not absorbed, is embedded. |
| 公开日期 | 1989-05-22 |
| 申请日期 | 1987-11-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85127]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | NAITO HIROKI,KUME MASAHIRO,SHIMIZU YUICHI,et al. Semiconductor laser device. JP1989128583A. 1989-05-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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