Method of manufacturing a group II-VI compound semiconductor
文献类型：专利
| 作者 | KENJI, SHIMOYAMA; TOSHINARI, FUJIMORI; HIDEKI, GOTO |
| 发表日期 | 1995-01-25 |
| 专利号 | GB2280309A |
| 著作权人 | MITSUBISHI KASEI CORPORATION |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of manufacturing a group II-VI compound semiconductor |
| 英文摘要 | A method of preparing a Group II-VI (eg. Zn Se) compound semiconductor thin film by a vapor-phase epitaxy using an organic metal compound of a Group II element (eg. dimethyl zinc) and a hydride (eg. H2Se, H2S) or on organic metal compound of a Group VI element (eg. dimethyl Se, diethyl sulphide) as the raw materials, which comprises repeating alternate introduction of an organic metal compound of a Group II element and a halide gas (eg. HCl) a halogen gas (eg. Cl2) or a mixture thereof. The use of a halide or halogen gas enhances the flatness of the semiconductor thin films grown. |
| 公开日期 | 1995-01-25 |
| 申请日期 | 1994-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85135]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI KASEI CORPORATION |
| 推荐引用方式 GB/T 7714 | KENJI, SHIMOYAMA,TOSHINARI, FUJIMORI,HIDEKI, GOTO. Method of manufacturing a group II-VI compound semiconductor. GB2280309A. 1995-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。