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文献类型：专利
| 作者 | NOMURA HIDENORI |
| 发表日期 | 1993-09-08 |
| 专利号 | JP1993062475B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To make a high speed response possible at the time of reset by a method wherein the vicinity of the non-excited region includes the active waveguide path and the vicinity is formed into a junction structure of either of a P-N-P junction structure and an N-P-N junction structure and the control electrode to control the electric field in the non-excited region, which exists in the active waveguide path, is provided in a junction structure. CONSTITUTION:The vicinity of a non-excited region 3a includes the active waveguide path, the vicinity is formed into a junction structure of either of a P-N-P junction structure and an N-P-N junction structure, and moreover, a control electrode 10 to control the electric field in the vicinity of the non-excited region 3a, which exists in the active waveguide path, is provided in a junction structure. When positive pulse voltage to an electrode 11 is impressed on the control electrode 10, the P-N junction, which is formed by an ion implanted region 8 and a confinement layer 4. is biased in the inverse direction. As a result, electrons existing in the non-excited region 3a are made to rapidly flow in the ion implanted region 8 because of the depletion region to generate in the vicinity of the non-excited region 3a and the electric field to generate there. Therefore, the absorption coefficient of the non-excited region 3a is also made to abruptly augment with the reduction of carrier concentration and the laser oscillation is made to immediately stop. |
| 公开日期 | 1993-09-08 |
| 申请日期 | 1985-01-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85146]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | NOMURA HIDENORI. -. JP1993062475B2. 1993-09-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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