Semiconductor laser
文献类型：专利
| 作者 | YAGI KATSUMI |
| 发表日期 | 1988-03-04 |
| 专利号 | JP1988051688A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To build a semiconductor laser device wherein light is transversely entrapped, laser rays focus at one and the same position in all the directions around the optical axis, and therefore an optical focus compensation is not required, by a method wherein the dimension between a dielectric layer provided with a current passage and an activation layer is so set as to be not more than the optical wavelength within the activation layer. CONSTITUTION:In a semiconductor laser of this design, a groove 7a in a dielectric layer 7 serves as a current passage when the semiconductor laser is supplied with a forward bias, and a current flows in the direction along which the growth of the dielectric layer 7 has been accomplished. Light is induced in an activation layer 4. It is so arranged that the light will be influenced by the dielectric layer 7 for transverse entrapment. It is so adjusted that the total thickness of a second clad layer 5 and superlattice layer 6, positioned between the activation layer 4 and dielectric layer 7, will not be larger than the optical wavelength in the activation (medium) layer 4. Formation of the dielectric layer 7 creates strain between the dielectric layer 7 and activation layer 4. Such strain may be absorbed by a superlattice layer 6 that is a 10-film laminate of GaAs films and AlAs films stacked up one upon another built on the second clad layer 5. Six pairs or more of the two types of laminates may be used when a film is not more than 500Angstrom thick. |
| 公开日期 | 1988-03-04 |
| 申请日期 | 1986-08-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85148]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | YAGI KATSUMI. Semiconductor laser. JP1988051688A. 1988-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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