Semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABUROU; MURATA KAZUHISA; HAYASHI HIROSHI; TAKENAKA TAKUO |
| 发表日期 | 1982-11-30 |
| 专利号 | JP1982194590A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To improve the reliability of the semiconductor laser element by means of extending the lifetime thereof and eliminating the unfavorable influence arising from the transition region of the active layer interface by a method wherein the carrier concentration of the crystal growing layer comprising the semiconductor laser is controlled. CONSTITUTION:In the process laminating N type clad layer 2, active layer 3, P type clad layer 4 and cap layer 5 on an N type GaAs substrate, the transition region is formed by means of mixing the impurities in the N type clad layer 2 in the active layer 3. This transient region is formed likewise on the interface between the active layer 3 and the P type clad layer 4. In order to settle this problem, the carrier concentration n2 of the active layer 3 is specified to be higher than the carrier concentration n1 of the N type clad layer 2 while the carrier concentration n3 of the P type clad layer 4 is specified to be higher than the carrier concentration n2 of the active layer 3, i.e. the transition region between the active layer 3 and the P type clad layer 4 may be eliminated by means of specifying the carrier concentration to be n1 |
| 公开日期 | 1982-11-30 |
| 申请日期 | 1981-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85150]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,MURATA KAZUHISA,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1982194590A. 1982-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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