Semiconductor laser device and manufacture thereof
文献类型：专利
| 作者 | NAMISAKI HIROBUMI; OMURA ETSUJI |
| 发表日期 | 1990-02-22 |
| 专利号 | JP1990052483A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and manufacture thereof |
| 英文摘要 | PURPOSE:To achieve a uniform carrier distribution on an activation layer and an efficient current injection by forming each conductive-type impurities area penetrating the activation layer selectively from both the left and right sides and forming a p-n junction in reference to an activation area making higher a conductivity of one clad layer. CONSTITUTION:After a semiconductor laser device forms a high-resistance AlGaAs layer 4 on a semi-insulating(SI) GaAs substrate 10, it forms a P-AlGaAs clad layer 3, a multiple-quantum well, namely a MQW activation layer 2, and an n-Al GaAs clad layer 1 in sequence. Then, a p-type impurities ion impregnation area 20 and an n-type impurities ion implantation area 21 are formed on these by the ion implantation method, respectively. The edge of an n-type impurities implantation area 21 and that of a p-type impurities implantation area 20 within an n-AlGaAs layer 3 are in AlGaAs junction with a high potential barrier, nearly no current flows, current flows through a p-n junction around the activation layer 2 with lower potential barrier than it, and carriers (in this case, electron) are injected into this activation layer 2. Thus, distribution of the carriers injected into this activation layer 2 becomes nearly uniform, thus achieving an efficient injection. |
| 公开日期 | 1990-02-22 |
| 申请日期 | 1988-08-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85153]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAMISAKI HIROBUMI,OMURA ETSUJI. Semiconductor laser device and manufacture thereof. JP1990052483A. 1990-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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