Semiconductor laser diode
文献类型：专利
| 作者 | SHINOHARA YASUO |
| 发表日期 | 1990-04-18 |
| 专利号 | JP1990105487A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser diode excellent in a laser oscillation characteristic by providing a plurality of melting back block layers whose band gap energy is larger than that of an active layer and smaller than that of a semiconductor between one side of the semiconductor and the active layer, while the more enlarging band gap energy the further a melting back block layer is from the active layer. CONSTITUTION:An active layer 2 consisting of Inx1Ga1-x1As1-y1Py1 is grown on an n-type InP substrate 1 by a liquid phase epitaxial method while continuously growing multilayer melting back block layers 3 consisting of Inx2Ga1-x2As1-y2 Py2, Inx3Ga1-x3As1-y3Py3, Inz4Ga1-x4As1-y4Py4 (x1 |
| 公开日期 | 1990-04-18 |
| 申请日期 | 1988-10-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85156]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SHINOHARA YASUO. Semiconductor laser diode. JP1990105487A. 1990-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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