Compound semiconductor device
文献类型：专利
| 作者 | HIRAO MOTONAO; FUJISAKI YOSHIHISA; TSUJI SHINJI; NAKAYAMA YOSHINORI; KASHIWADA YASUTOSHI |
| 发表日期 | 1985-02-02 |
| 专利号 | JP1985021586A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor device |
| 英文摘要 | PURPOSE:To prevent the variation of element shape by side etching by a method wherein the surface layer of an InGaAsP/InP series multilayer epitaxial crystal is made of InP, and an oxide film is formed thereon and chemically etched. CONSTITUTION:An N type InP layer 6, an InGaAsP active layer 5, a P type InP clad layer 4, an InGaAsP contact layer 3, an InP layer 2, and an InGaAsP cap layer 1 are grown on an InP substrate 7 by a liquid growing method. The cap layer 1 is removed by etching, a phosphorus glass film being formed on the InP layer 2 and made as a mask 8, and being then etched with Br-methanol solution. Then, the side surface is filled with a P type InP layer 9, an N type Inp layer 10, and an InGaAsP layer 11 by liquid phase growth. Since no side etching generates, the width of an active layer can be set at a constant value with good reproducibility. After removal of the oxide film and the InP layer 2, a P-side electrode 12 and an N-side electrode 13 are formed and then the laser diode is completed. |
| 公开日期 | 1985-02-02 |
| 申请日期 | 1983-07-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85157]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | HIRAO MOTONAO,FUJISAKI YOSHIHISA,TSUJI SHINJI,et al. Compound semiconductor device. JP1985021586A. 1985-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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