Semiconductor laser
文献类型：专利
| 作者 | HAMADA HIROYOSHI |
| 发表日期 | 1991-07-01 |
| 专利号 | JP1991153090A |
| 著作权人 | SANYO ELECTRIC CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize high output and to obtain a semiconductor laser, which has window structure suitable for AlGaInP semiconductor laser, by stacking AlGaInP, GaInP, and GaAs in order in a current injection area, and stacking AlGaInP, and GaAs in order in a current noninjection area. CONSTITUTION:In an A area, the p-GaAs/p-GaInP junction between a contact layer 8 and a cap layer 6 and the p-GaInP/P-AlGaInP junction between the cap layer 6 and a p-clad layer 5 are made, and in a B area, p-GaAs/p-GaAs/p- GaInP junction between the contact layer 8 and the p-clad layer 5 is made. When application voltage is 2.5V, a current flows 150mA or more in the element A, while in the element B a current hardly flows. That is, a current hardly flows to the B area, and the B area becomes a current noninjection area by the heterobarriers of B junction. |
| 公开日期 | 1991-07-01 |
| 申请日期 | 1989-11-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85160]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SANYO ELECTRIC CO LTD |
| 推荐引用方式 GB/T 7714 | HAMADA HIROYOSHI. Semiconductor laser. JP1991153090A. 1991-07-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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