Tunable semiconductor laser
文献类型：专利
| 作者 | AMANN, MARKUS-CHRISTIAN; BAUMANN, GERHARD; HEINEN, JOCHEN; THULKE, WOLFGANG |
| 发表日期 | 1991-04-16 |
| 专利号 | US5008893 |
| 著作权人 | FINISAR CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Tunable semiconductor laser |
| 英文摘要 | A tunable semiconductor laser which is formed on a substrate 2 which has a first contact 14 on one surface and a third contact 16 on the opposite surface so as to supply the operating current which is laterally limited to a laser-active stripe through a barrier layer 4 l and including a second contact 15 on a ridge waveguide 11, 12, 13 so as to inject charge carriers into a tuning layer 9 mounted adjacent an active layer 6 and which is separated from the active layer by highly doped central layer 10 so as to allow tuning of the laser. |
| 公开日期 | 1991-04-16 |
| 申请日期 | 1990-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85162]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FINISAR CORPORATION |
| 推荐引用方式 GB/T 7714 | AMANN, MARKUS-CHRISTIAN,BAUMANN, GERHARD,HEINEN, JOCHEN,et al. Tunable semiconductor laser. US5008893. 1991-04-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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