A buried type semiconductor laser device
文献类型：专利
| 作者 | YOSHIDA, TOSHIHIKO; TAKIGUCHI, HARUHISA; KANEIWA, SHINJI 101 KYOBATE MANSION; KUDO, HIROAKI; MATSUI, SADAYOSHI |
| 发表日期 | 1987-03-04 |
| 专利号 | EP0212977A2 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A buried type semiconductor laser device |
| 英文摘要 | A buried type semiconductor laser device comprises a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate (1), wherein said laser-oscillation operating area contains a buffer layer (2) having the same polarity as said substrate, an active layer (3) and a cladding layer (4) having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of a burying layer (5) and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate,through said substrate (1) or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer (5) from said cladding layer (4), thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased. |
| 公开日期 | 1987-03-04 |
| 申请日期 | 1986-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85166]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | YOSHIDA, TOSHIHIKO,TAKIGUCHI, HARUHISA,KANEIWA, SHINJI 101 KYOBATE MANSION,et al. A buried type semiconductor laser device. EP0212977A2. 1987-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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