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文献类型：专利
| 作者 | UCHAMA SEIJI; KINOSHITA SUSUMU; IGA KENICHI |
| 发表日期 | 1993-08-31 |
| 专利号 | JP1993059596B2 |
| 著作权人 | TOKYO KOGYO DAIGAKUCHO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To reduce operating current density while generating uniformly distributed laser beams by forming a resonator in the direction vertical to a p-n junction, shaping a semiconductor region on the side of the resonator and forming a current path. CONSTITUTION:The circular mesas of a p-n junction composed of an n-type GaAlAs clad layer 11 and a p-type GaAs active layer 12 is formed, and reflecting mirrors 20, 21 are shaped. A p-type GaAlAs layer 14 is buried and grown in the peripheries of the reflecting mirrors. One part of the layer 14 is removed, and an n-type GaAlAs layer 17 is formed. Diffusion potential between the layers 11, 12 is set so as to be made smaller than that between the layers 11, 14 in the constitution. When positive polar voltage is applied to an electrode 19 and forward currents are fed, electrons as minority carriers are injected into the layer 12 through an electrode 18 and the layers 17, 11, 12 and each p-n junction, energy is distributed uniformly, and laser beams having a circular cross section are emitted. |
| 公开日期 | 1993-08-31 |
| 申请日期 | 1990-09-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85176]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO KOGYO DAIGAKUCHO |
| 推荐引用方式 GB/T 7714 | UCHAMA SEIJI,KINOSHITA SUSUMU,IGA KENICHI. -. JP1993059596B2. 1993-08-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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