Semiconductor laser element
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; EBE KOJI |
| 发表日期 | 1989-11-10 |
| 专利号 | JP1989280387A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a laser element whose oscillation efficiency does not drop even when an operating temperature is set to a low temperature by a method wherein a clad change layer where a composition ratio of tin has been changed continuously is formed between a first clad layer and an active layer and an energy band gap of both crystals constituting the active layer and the first clad layer is changed continuously. CONSTITUTION:A first clad layer 22 whose conductivity type is identical to that of a compound semiconductor substrate 21 and which is composed of a lead-tin-tellurium- selenium layer is formed on the substrate 21, of one conductivity type, containing Iead; an active layer 27 whose connectivity type is identical to that of the first clad layer 22 and which is composed of a mesa-shaped lead-tin-tellurium Iayer is formed on it; a second clad layer 28 whose conductivity type is opposite to that of the active layer 27 and which is composed of a mesa-shaped lead-tin-tellurium-selenium Iayer is formed on it. In such a semiconductor laser element, a clad change layer 26 which is composed of a lead-tin-tellurium-selenium crystal layer and where a composition ratio of tin contained in the crystal layer has been changed continuously is formed between the first clad Iayer 22 and the active layer 27 so that an energy band gap of both crystals constituting the active layer 27 and the first clad layer 22 is changed continuously. |
| 公开日期 | 1989-11-10 |
| 申请日期 | 1988-05-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85181]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,EBE KOJI. Semiconductor laser element. JP1989280387A. 1989-11-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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