Semiconductor laser
文献类型：专利
| 作者 | FUJII HIROAKI; UENO YOSHIYASU; ENDO KENJI |
| 发表日期 | 1992-03-13 |
| 专利号 | JP1992080983A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize a window structure of high power excellent in lateral mode controllability by a method wherein the width of the upper part of a mesa is larger than that of the base of the mesa, and the base is specified in width. CONSTITUTION:A double hetero structure composed of a first clad layer 110 of AlGaInP or AlInP, an active layer 100 of GaInP or Al GaInP, and a second clad layer 120 of AlGaInP or AlInP is provided onto a GaAs substrate 200, where the second clad layer 120 is partially formed thick to constitute a mesa. The width of the upper part of the mesa is larger than that of the base of the mesa, and the base is set smaller than 5mum in width. The forbidden band width of the active layer close to a laser resonator is larger than that of the active layer at the center of a laser. That is, a region 250 serves as an active region, and regions 260 and 270 function as a window region, and the forbidden band width of the active layer located at the regions 260 and 270 is energized higher than that of the active layer located in the region 250. |
| 公开日期 | 1992-03-13 |
| 申请日期 | 1990-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85184]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | FUJII HIROAKI,UENO YOSHIYASU,ENDO KENJI. Semiconductor laser. JP1992080983A. 1992-03-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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