Chemical vapor deposition equipment
文献类型：专利
| 作者 | HOSHINO MASATAKA; KOMENO JUNJI; AOKI OSAMU |
| 发表日期 | 1987-01-20 |
| 专利号 | JP1987011222A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Chemical vapor deposition equipment |
| 英文摘要 | PURPOSE:To form a hetero-epitaxial layer having thin film thickness with excellent reproducibility and high precision by disposing a support frame, a bellows and an operating plate after a reaction pipe and interlocking a bellows for an auxiliary section while being interlocked with the expansion and contraction of the bellows. CONSTITUTION:A wafer holder 9 must be moved before and behind in a reaction pipe 1 by an operating plate 12 in order to reciprocate a wafer 16 between a first partition 5 and a second partition 6, but a bellows 21 fitted to an operating plate 12 for an auxiliary section 24 is shrunk when a bellows 11 mounted to a support frame 11 for a main body section 19 is extended. That is, the two bellows 11, 21 are operated in the opposite directions on to each other the movement of the operating plates 12, thus generating no variation of atmospheric pressure and fluctuation of an air current. Accordingly, a hetero-epitaxial layer having multilayers is manufactured accurately with high precision. |
| 公开日期 | 1987-01-20 |
| 申请日期 | 1985-07-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85185]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | HOSHINO MASATAKA,KOMENO JUNJI,AOKI OSAMU. Chemical vapor deposition equipment. JP1987011222A. 1987-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。