Manufacture of optical semiconductor element
文献类型：专利
| 作者 | TANAKA HIDEAKI; AKIBA SHIGEYUKI; SUZUKI MASATOSHI; UKO KATSUYUKI |
| 发表日期 | 1989-09-14 |
| 专利号 | JP1989231317A |
| 著作权人 | 国際電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optical semiconductor element |
| 英文摘要 | PURPOSE:To facilitate ion implantation, and to execute annealing after ion implantation easily by laminating a compound semiconductor wafer with an ion implanting mask and the compound semiconductor layer of a single layer of multilayers as an annealing protective film and successively conducting ion implantation and annealing. CONSTITUTION:An N-InGaAs buffer layer 12, an N-InGaAs layer 13, an N-InP layer 14, an N-InGaAs layer 15 and an ion implanting mask N-InP layer 16 are crystal-grown successively onto an InP substrate 1 An etching-mask Si3N4 film 17 is deposited onto the N-InP layer 16, and a photo-resist film 18 is applied. A pattern is exposed and developed to the photo-resist film 18, and transferred to the Si3N4 film 17. The ion implanting mask N-InP layer 16 is etched vertically, using the Si3N4 film 17 as an etching mask. The photo- resist film 18 is removed, and the Si3N4 film 17 is etched off. Be ions 201 are implanted through an ion implantation process, and an ion implanting region 19 as a channel is shaped. The whole is annealed in a nitrogen gas atmosphere in an annealing process. The compound semiconductor layers 14, 15 function as annealing protective films at that time. |
| 公开日期 | 1989-09-14 |
| 申请日期 | 1988-03-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85186]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 国際電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | TANAKA HIDEAKI,AKIBA SHIGEYUKI,SUZUKI MASATOSHI,et al. Manufacture of optical semiconductor element. JP1989231317A. 1989-09-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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