Semiconductor laser device
文献类型：专利
| 作者 | MIHASHI YUTAKA; NAGAI YUTAKA |
| 发表日期 | 1990-08-24 |
| 专利号 | JP1990213186A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable execution of oscillation in a fundamental transverse mode and to attain strong resistance to surge breakdown, long lifetime, high reliability and high output by a method wherein a disordered region of a quantum well active layer by diffusion of an impurity is formed in the shape of a circular-arc in the vicinity of the end face of a resonator, a refractive index is lowered and a band gap is widened. CONSTITUTION:An N-type AlxGa1-xAs clad layer 2, a quantum well active layer 3 made up of N-type AlyGa1-yAs, a P-type AlxGa1-xAs clad layer 4 and a P-type GaAs contact layer 5 are formed sequentially on an N-type GaAs substrate Next, a P-type impurity such as Zn is diffused from the surface, so as to form an impurity diffused region 6 having a depressed shape in the direction of an end face and having a circular-arc boundary region reaching the N-type AlxGa1-xAs layer. By this diffusion of Zn, the active layer is so disordered that the circular-arc boundary is formed in the vicinity of a light- emitting end face, and an Al composition ratio is made to be larger than inside of a resonator. When the Al composition ratio becomes large, a band gap turns wide and a refractive index becomes small. Thereby oscillation in a fundamental transverse mode can be executed up to a high output. |
| 公开日期 | 1990-08-24 |
| 申请日期 | 1989-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85190]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIHASHI YUTAKA,NAGAI YUTAKA. Semiconductor laser device. JP1990213186A. 1990-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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