Semiconductor light emitting device
文献类型：专利
| 作者 | KAWAMO EIJI; TSUCHIYA TOSHIO |
| 发表日期 | 1991-08-26 |
| 专利号 | JP1991195075A |
| 著作权人 | ANRITSU CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To take out a light having a wide spectral range with a small emission angle by a method wherein an active layer is composed of a plurality of auxiliary active layers which are connected to each other in cascade along a waveguide axis and the auxiliary active layer located closer to a light emitting surface side has a larger forbidden band width. CONSTITUTION:Auxiliary active layers 1 and 2 are so made as to have the relation between the forbidden band with Eg1 of the auxiliary active layer 1 and the forbidden band width Eg2 of the auxiliary active layer 2 Eg1>Eg2. A light emitted into the auxiliary active layer 2 from the auxiliary active layer 1 is easy to be absorbed and a light emitted into the auxiliary active layer 1 from the auxiliary active layer 2 is hard to be absorbed. A non-reflective end surface coating 3a and a non-reflective end surface coating 3b are formed in order to suppress a laser oscillation by a Fabri-Perot mode. With this constitution, a light having a wide special range can be taken out with a high intensity and with a small emission angle. |
| 公开日期 | 1991-08-26 |
| 申请日期 | 1989-12-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85191]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORP |
| 推荐引用方式 GB/T 7714 | KAWAMO EIJI,TSUCHIYA TOSHIO. Semiconductor light emitting device. JP1991195075A. 1991-08-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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