Manufacture of semiconductor laser device
文献类型：专利
| 作者 | OKURA YUJI; NAKAJIMA YASUO |
| 发表日期 | 1988-12-09 |
| 专利号 | JP1988302586A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To control the reflectivity of an end face with less number of steps and good controllability by so forming a dielectric film as to cover the whole face of a multilayer structure having a deeper stripelike groove than an active region, and covering the grooves at every other one with a mask to form a metal film or a dielectric multilayer film. CONSTITUTION:A multilayer structure having an active region 2 is formed, a plurality of deeper grooves than the region 2 are formed in a stripelike state, and a dielectric film 6 is so formed as to cover the whole surface of the structure formed with the grooves. Then, the grooves are covered at every other one with a mask 8, and a metal film 7 or a dielectric multilayer film is formed on the whole surface except the grooves covered with the masks 8. For example, after the film 6 is formed, a window is opened at the film 6 of the flat section except the grooves, the grooves are covered at every other one with the masks 8, and metal for forming a reflection film is deposited on one side resonator end face. Thereafter, after the mask 8 is removed, it is cut at the center of the mask 8, and further cut in a direction perpendicular to the groove to manufacture a sole wavelength oscillation semiconductor laser chip. |
| 公开日期 | 1988-12-09 |
| 申请日期 | 1987-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85192]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | OKURA YUJI,NAKAJIMA YASUO. Manufacture of semiconductor laser device. JP1988302586A. 1988-12-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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