Semiconductor laser
文献类型：专利
| 作者 | IRIKAWA MASANORI; KASHIWA SUSUMU |
| 发表日期 | 1988-09-09 |
| 专利号 | JP1988217690A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To improve the reliability and yield of an element by displaying a current constriction function by first and second ion implanting layers while realizing index waveguide structure by an active layer and the second ion implanting layer. CONSTITUTION:A p-n junction constituted of a second ion implanting layer 28 formed into an n cap layer 27 is brought to reverse bias conditions when an element is operated, and currents are caused to flow through only a channel section 24. A p-n junction organized of a p-clad layer 21 and a first ion implanting layer 25 shaped into said layer 21 is brought to forward bias conditions on operation, but only the p-n junction of the channel section is brought to an ON state because the ON voltage of the p-n junction is made higher than that of the heterojunction of the channel section 24. That is, a current constriction function can be displayed by the ion implanting layers 25, 28. The channel section 24 has a refractive index larger than a peripheral section and index waveguide structure as a distributed index in the transverse direction in an active layer 22. Accordingly, the reliability and yield of the element are improved. |
| 公开日期 | 1988-09-09 |
| 申请日期 | 1987-03-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85194]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IRIKAWA MASANORI,KASHIWA SUSUMU. Semiconductor laser. JP1988217690A. 1988-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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