External resonator type semiconductor laser device
文献类型：专利
| 作者 | FUJITA TOSHIHIRO; ODANI JIYUN |
| 发表日期 | 1989-07-12 |
| 专利号 | JP1989175787A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | External resonator type semiconductor laser device |
| 英文摘要 | PURPOSE:To further narrow the width of a spectrum by controlling and restricting the existence of a spontaneous emission light by providing a polarization selector element transmitting only a TE mode fraction of the light emanating from a second end surface of a semiconductor active medium on which an anti-reflection film coating is applied. CONSTITUTION:An anti-reflection film coating 14 is applied on a second end surface 28 between first and second end surfaces 24, 28 of a semiconductor active medium 10. There are provided a lens optical system 16 collimating light emanating from the second end surface 28, a polarization selector element 52 transmitting only a TE mode component of the light emanating from the second end surface 28, and a reflector 20 reflecting the light emanating from the second end surface 28. The first end surface 24 and the reflector 20 constitute an external resonator. For example, light emitted from the end surface 28 of the semiconductor laser 10 impinges the polarization selector element 52 via the lens 16. Laser light 54 transmitted therethrough is incident upon a grating 20. Laser light 56 selected in its wavelength through the grating is allowed to again pass through the polarization selector element 52, and fed back to the semiconductor laser 10 via the lens 16. |
| 公开日期 | 1989-07-12 |
| 申请日期 | 1987-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85197]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FUJITA TOSHIHIRO,ODANI JIYUN. External resonator type semiconductor laser device. JP1989175787A. 1989-07-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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