Semiconductor laser diode and semiconductor laser diode assembly containing the same
文献类型：专利
| 作者 | KWAK, JOON-SEOP; CHAE, SU-HEE |
| 发表日期 | 2004-10-20 |
| 专利号 | EP1469569A2 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode and semiconductor laser diode assembly containing the same |
| 英文摘要 | Provided is a semiconductor laser diode. The semiconductor laser diode (100a) includes a first material layer (120), an active layer (130), and a second material layer (140), characterized in that the semiconductor laser diode includes: a ridge waveguide (200), which is formed in a ridge shape over the second material layer (140) to define a channel (180) defined so that a top material layer (143) of the second material layer (140) is limitedly exposed, and in which a second electrode layer (170) which is in contact with the top material layer (143) of the second material layer (140) via the channel (180) is formed; and a first protrusion (210), which is positioned at one side of the ridge waveguide (200) and has not less height than that of the ridge waveguide (200). |
| 公开日期 | 2004-10-20 |
| 申请日期 | 2003-12-23 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85199]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | KWAK, JOON-SEOP,CHAE, SU-HEE. Semiconductor laser diode and semiconductor laser diode assembly containing the same. EP1469569A2. 2004-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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