Semiconductor light-emitting device
文献类型：专利
| 作者 | MATSUO NOZOMI |
| 发表日期 | 1988-07-09 |
| 专利号 | JP1988166283A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To inhibit reactive (spreading) current and to enable a device to operate stably at a low threshold value with high efficiency, by providing a dopant diffused region vertically extending from directly over a mesa stripe up to an active layer or to the vicinity thereof while transverse extension thereof is limited within the region of the mesa stripe. CONSTITUTION:A first clad layer 3 (a.g. of n-type Ga0.7Al0.3As) is formed on a semiconductor substrate 2 (e.g. of n-type GaAs). A second clad layer 8 (e.g. of highly resistive GaO.7Al0.3As) having a mesa stripe structure is formed on an active layer 4 (e.g. of non-doped GaAs). Further, a buried layer 7, (e.g. of n-type GaAs) and an ohmic contacting cap layer 12 (e.g. of P-type GaAs) are buried and a dopant diffused region 9 (e.g. Zn diffused region) is formed such that it extends from the cap layer 12 directly over the mesa stripe of the second clad layer up to the active layer 4. |
| 公开日期 | 1988-07-09 |
| 申请日期 | 1986-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85202]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | MATSUO NOZOMI. Semiconductor light-emitting device. JP1988166283A. 1988-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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