Semiconductor laser element and semiconductor laser device using it
文献类型：专利
| 作者 | KOBAYASHI MASAMICHI; HOTSUCHI CHIYOKO |
| 发表日期 | 1985-01-23 |
| 专利号 | JP1985012785A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and semiconductor laser device using it |
| 英文摘要 | PURPOSE:To contrive the increase in reliability and the prolongation of life time of the titled device by the prevention of chip inclination and thereby improvement of thermal diffusion by a method wherein the neighborhood of both side edges of the chip is provided with a buried hetero junction in parallel with a buried hetero junction. CONSTITUTION:An N type GaAlAs 4, a GaAs active layer 5, a P type GaAlAs 6, and an N type GaAs 7 are superposed on an N type GaAs substrate 2. Mesa grooves 18 and 19 are provided, and a stripe 20 about 10mum wide and a wider auxiliary stripe 21 are formed. The pitch of the stripe 21 is about 300mum. Next, the burial of a P type GaAlAs blocking layer 9 and an N type GaAlAs 10 in the grooves 18 and 19 by a liquid epitaxial method causes partial swelling. Zn is diffused through an SiO2 mask 11, resulting in the formation of a connection layer 12 reaching the P-layer 6. Au electrodes 13 and 14 are attached, which electrode 13 is formed discontinuously at the center of the stripe 2 Thereafter, the wafer 17 is cut at the center of the stripe 21 and split along a cleavage line in the direction perpendicular to the stripe 20, and accordingly a chip 1 is obtained. The chip 1 does not incline because of the swellings at the center and on both sides, thus being improved in thermal diffusion by uniform wetting to a solder 15; therefore the titled element of high reliability and long life time can be obtained. |
| 公开日期 | 1985-01-23 |
| 申请日期 | 1983-07-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85204]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KOBAYASHI MASAMICHI,HOTSUCHI CHIYOKO. Semiconductor laser element and semiconductor laser device using it. JP1985012785A. 1985-01-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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