Semiconductor optical waveguide passage and semiconductor laser and optical amplifier based on its application
文献类型：专利
| 作者 | NOBUHARA HIROYUKI |
| 发表日期 | 1992-12-04 |
| 专利号 | JP1992349681A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical waveguide passage and semiconductor laser and optical amplifier based on its application |
| 英文摘要 | PURPOSE:To provide a semiconductor photo wave guide passage and a semiconductor laser which can be formed by a single crystal growth in terms of a semiconductor photo wave guide passage whose band gap energy varies along the transmission direction of light and a semiconductor laser and a photo amplifier which uses such semiconductor photo wave guide passage as an active layer. CONSTITUTION:This construction includes a quantum well structure which is formed on an offset-shaped layer having a flat region and a slanting region or a substrate 1 provided the offset shape where the thickness of a quantum well layer 3 and band gap energy are different from each other and allows the transmission of light through the quantum well structure in the slanting direction in the slanting region. |
| 公开日期 | 1992-12-04 |
| 申请日期 | 1991-05-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85209]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NOBUHARA HIROYUKI. Semiconductor optical waveguide passage and semiconductor laser and optical amplifier based on its application. JP1992349681A. 1992-12-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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