Method of making a stripe-geometry ii/vi semiconductor gain-guided injection laser structure using ion implantation
文献类型：专利
| 作者 | HABERERN KEVIN W |
| 发表日期 | 1997-02-06 |
| 专利号 | WO1996039733A3 |
| 著作权人 | PHILIPS ELECTRONICS N.V. |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of making a stripe-geometry ii/vi semiconductor gain-guided injection laser structure using ion implantation |
| 英文摘要 | A blue, green or blue-green stripe-geometry II/VI semiconductor injection laser utilizing a Zn1-uCduSe active layer (quantum well) having Zn1-xMgxSySe1-y cladding layers and ZnSzSe1-z guiding layers is fabricated on a GaAs substrate. The stripe-geometry configuration is obtained by ion implanting a dopant such as Nitrogen or Oxygen into the structure to form blocking layer portions of higher resistivity in the second cladding layer and the second guiding layer. These blocking layer portions are positioned on both sides of, and thereby define, a stripe-shaped lateral confinement region of lower resistivity in the second cladding layer and the second cladding layer. |
| 公开日期 | 1997-02-06 |
| 申请日期 | 1996-05-23 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85216]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PHILIPS ELECTRONICS N.V. |
| 推荐引用方式 GB/T 7714 | HABERERN KEVIN W. Method of making a stripe-geometry ii/vi semiconductor gain-guided injection laser structure using ion implantation. WO1996039733A3. 1997-02-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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