Semiconductor laser device
文献类型：专利
| 作者 | SHIGIHARA, KIMIO |
| 发表日期 | 2008-09-23 |
| 专利号 | US7428256 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes an active layer, a pair of guiding layers sandwiching the active layer, and a pair of cladding layers sandwiching the active layer and the pair of guiding layers. The pair of guiding layers are InGaAsP lattice-matched to GaAs. The pair of cladding layers are AlGaAs. The Al composition ratios of the pair of AlGaAs cladding layers are 0.4 or less. The Al composition ratios are set such that the refractive indices of the pair of AlGas cladding layers do not exceed those of the pair of InGaAsP guiding layers. |
| 公开日期 | 2008-09-23 |
| 申请日期 | 2007-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85234]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | SHIGIHARA, KIMIO. Semiconductor laser device. US7428256. 2008-09-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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