Semiconductor laser device capable of suppressing leakage current in a light emitting and surface and method for manufacturing same
文献类型：专利
| 作者 | OSHIMA, NOBORU; SAKATA, MASAHIKO; YOKOTA, MAKOTO |
| 发表日期 | 2002-05-30 |
| 专利号 | US20020064200A1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device capable of suppressing leakage current in a light emitting and surface and method for manufacturing same |
| 英文摘要 | For evaporating a protective coating on a light emitting end surface 51a of a laser chip 51, there is formed first an Si film 52a, which is free from generation of oxygen due to decomposition. Thus, there is created a coating in the vicinity of the light emitting end surface 51a immediately after start of evaporation process under conditions of low partial pressure of oxygen. At the same time, in the later evaporation process of the protective coating 52b, if oxygen is generated due to decomposition of the evaporation material Al2O3, and oxygen partial pressure is increased, collision or bonding of the oxygen with the end surface 51a is prevented, thereby decreasing damages given to the end surface 51a in the process of protective coating creation. Further, the Si film 52a has a film thickness as small as approx. 20 Å. This controls generation of leakage current in the Si film 52a (or the end surface 51a), and prevents negative influence on oscillation characteristics. |
| 公开日期 | 2002-05-30 |
| 申请日期 | 2001-11-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85236]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | OSHIMA, NOBORU,SAKATA, MASAHIKO,YOKOTA, MAKOTO. Semiconductor laser device capable of suppressing leakage current in a light emitting and surface and method for manufacturing same. US20020064200A1. 2002-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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