半導体光素子
文献类型：专利
| 作者 | 後藤 勝彦 |
| 发表日期 | 1996-08-22 |
| 专利号 | JP2553731B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体光素子 |
| 英文摘要 | PURPOSE:To obtain a light element equipped with a long wave-length which uses the disorderliness of a quantum well structure and is free from lattice unconformity as well by possessing the quantum well that makes a well layer have its composition: In0.53Ga0.47As and further, a barrier layer have its composition: (AlxGa1-x)0.47In0.53As and by making a part of the quantum well structure have disorderliness by the scatter or the like of impurities and have a layer equipped with a uniform composition. CONSTITUTION:After a region that is formed into a stripe is left as an active region, an Si diffusion region 6 and a Zn diffusion region 7 are formed by diffusing Si on one side of the above active region and Zn on the other side respectively. In diffusion of Si and Zn, the movement of Al and Ga is performed between In0.53Ga0.47As well layers 21 and (Al0.3Ga0.7)0.47 In0.53As barrier layers 22 in a quantum well layer 2 to have each uniform concentration. On the other hand, originally, In and As have the same concentration in two layers 21 and 22 and then, no alteration in concentration takes place. As a result of having disorderliness of the quantum well by impurity diffusion, the quantum well layer 2 is formed into an (AlyGa1-y)0.47In0.53As layer 23 that is equipped with a uniform composition. |
| 公开日期 | 1996-11-13 |
| 申请日期 | 1990-04-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85239]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 後藤 勝彦. 半導体光素子. JP2553731B2. 1996-08-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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