High-power semiconductor laser device including resistance reduction layer which has intermediate energy gap
文献类型：专利
| 作者 | AKINAGA, FUJIO; FUKUNAGA, TOSHIAKI; WADA, MITSUGU |
| 发表日期 | 2001-11-22 |
| 专利号 | US20010043630A1 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | High-power semiconductor laser device including resistance reduction layer which has intermediate energy gap |
| 英文摘要 | In a semiconductor laser device, a lower cladding layer, a lower optical waveguide layer, an active layer, an upper optical waveguide layer, an upper cladding layer, and a contact layer are formed in this order on a GaAs substrate. The semiconductor laser device has at least one of first and second resistance reduction layers. The first resistance reduction layer is arranged between the substrate and the lower cladding layer, and made of an InGaAsP material having an energy gap which is greater than the energy gap of the substrate, and smaller than the energy gap of the lower cladding layer. The second resistance reduction layer is arranged between the upper cladding layer and the contact layer, and made of an InGaAsP material having an energy gap which is greater than the energy gap of the contact layer, and smaller than the energy gap of the upper cladding layer. |
| 公开日期 | 2001-11-22 |
| 申请日期 | 2001-05-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85241]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | AKINAGA, FUJIO,FUKUNAGA, TOSHIAKI,WADA, MITSUGU. High-power semiconductor laser device including resistance reduction layer which has intermediate energy gap. US20010043630A1. 2001-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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