Semiconductor laser device
文献类型：专利
| 作者 | NAKAMURA MICHIHARU; UMEDA JIYUNICHI; KURODA IKUROU; YAMASHITA SHIGEO |
| 发表日期 | 1982-10-23 |
| 专利号 | JP1982172791A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a laser having single stability for longitudinal and lateral modes and no excess optical noise component against a modulation signal by a method wherein an N type GaAlAs layer, GaAs active layer, P type GaAlAs layer are stacked and epitaxially grown on an N type GaAs substrate having a groove at the central section and cyclic projections and recesses are provided on the surface of the P type layer. CONSTITUTION:A recessed groove 9 with a depth of 5mum and a width of 2- 8mum is digged in the direction[011]on an N type GaAs substrate 1 having a (100) plane, and an N type Ga1-xAlxAs (x 0.3) layer 2, GaAs active layer 3, and P type Ga1-yAlyAs (y 0.3) layer 4 are stacked on the whole surface of the substrate 1 for liquidus epitaxial growth while burying the groove. Next, a diffraction grating 8 with a cycle of 3,700Angstrom and a depth of 1,500Angstrom is formed on the surface of the layer 4 by using an interference exposure method used laser light and a chemical etching method at the same time and a P type Ga1-zAlzAs (z 0.1) layer 5 is grown on the whole surface of the layer 4 including the diffraction grating 8. After that, Zn is diffused by corresponding to the groove 9 and a Cr-Au electrode 7 is formed on the layer 5 and an Au-Ge-Ni electrode 6 is installed on the rear of the substrate |
| 公开日期 | 1982-10-23 |
| 申请日期 | 1982-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85243]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | NAKAMURA MICHIHARU,UMEDA JIYUNICHI,KURODA IKUROU,et al. Semiconductor laser device. JP1982172791A. 1982-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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