Manufacture of semiconductor laser
文献类型：专利
| 作者 | SUDO HISAO |
| 发表日期 | 1986-12-23 |
| 专利号 | JP1986292390A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To form a gold reflective film without a risk of short-circuiting by a method wherein, after the end plane of a semiconductor laser is coated with a silicon nitride film, gold is evaporated on the surface of it and lifted off except the desired area. CONSTITUTION:The P-type electrodes 13 and 14 of semiconductor laser arrays 11 and 12 are closely arranged parallel to each other so as to form a silicon nitride film 16 and a gold reflective film 17 on the end plane including an active layer 15 with electron cyclotron resonance plasma CVD method. The silicon nitride film is supersonic-processed with fluoric acid so as to fully remove the silicon nitride applied on the side plane 18. Thus, the reflective film 17 on it is lifted off, and the other region is kept coated. By this method, the reflective film of gold is fully separated from the electrodes, thereby completely preventing the reflective film from causing short-circuiting of the electrodes or current leakage. |
| 公开日期 | 1986-12-23 |
| 申请日期 | 1985-06-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85246]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SUDO HISAO. Manufacture of semiconductor laser. JP1986292390A. 1986-12-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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