Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; MIYAUCHI NOBUYUKI; SUYAMA NAOHIRO; YANO MORICHIKA |
| 发表日期 | 1984-03-06 |
| 专利号 | JP1984040592A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a high output element by a method wherein a stripe groove of the width narrower in the neighborhood of a resonator end surface and wider at the center is formed in the surface of a substrate, a clad layer which is flat at the narrower width part and bent to the direction of the substrate at the wider width part is provided thereon, then an active layer and a photo guide layer of refractive index smaller than that of the active layer and larger than that of the clad layer are provided thereon. CONSTITUTION:The stripe groove of the width narrower in the neighborhood of the resonator end surface and wider at the center is formed in the surface of the P type GaAs substrate 31, and the part except the groove is covered with an N type GaAs current block layer 32. Next, the P type GaAlAs clad layer 33 is deposited over the entire surface including the groove and the layer 32, thereat the shape of the layer 33 is made flat at the narrower width part of the groove and bent to the direction of the substrae 31 at the wider width part. Thereafter, the active layer 34 of GaAs of GaAlAs is deposited thereon, and the N type GaAlAs photo guide layer 37 of refractive index smaller than that of the layer 34 but larger than that of the layer 33 is formed thereon and covered with a GaAlAs clad layer 35 and an N type GaAs cap layer 36. |
| 公开日期 | 1984-03-06 |
| 申请日期 | 1982-08-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85253]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,MIYAUCHI NOBUYUKI,SUYAMA NAOHIRO,et al. Semiconductor laser element. JP1984040592A. 1984-03-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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