Semiconductor laser device
文献类型：专利
| 作者 | TODOROKI SATORU |
| 发表日期 | 1987-02-09 |
| 专利号 | JP1987030390A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enhance the quality and the reliability by disposing grooves of different wide and narrow widths with their center lines on the same linear line, passing a laminate in a direction substantially perpendicular to the center lines of the grooves and forming the grooves of the depths which arrive at a semiconductor substrate. CONSTITUTION:A striped groove 2a of 3mum width and a striped groove 2b of approx. 10mum are formed in a depth of 5-2mum on an N-type GaAs substrate 1 so that the center lines of the both grooves are disposed on the same linear line. After an etching CVD film is removed, an N-type Ga1-xAlxAs clad layer 3, an N-type or P-type Gax-yAlyAs active layer 4, a P-type Ga1-xAlxAs clad layer 5, and an N-type GaAs cap layer 6 are sequentially laminated on the substrate Then, an ohmic contact layer 7 which arrives at part of the layer 5 is formed on a region except the portion coated with a mask on the layer 6. Thus, an optically preferable coupling effect and stable reliability can be obtained. |
| 公开日期 | 1987-02-09 |
| 申请日期 | 1985-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85255]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TODOROKI SATORU. Semiconductor laser device. JP1987030390A. 1987-02-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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