Semiconductor laser
文献类型：专利
| 作者 | HATA TOSHIO |
| 发表日期 | 1988-02-17 |
| 专利号 | JP1988036589A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To decrease the thermal resistance of semiconductor laser and to improve reliability, by forming a second clad layer so that the thickness of the part approximately corresponding to the light emitting region of an active layer is thick and that of the part corresponding to the part other than the light emitting region is thin. CONSTITUTION:A stripe-shaped current constriction structure is provided on a substrate A double heterojunction type multilayered crystal comprises a first clad layer 3, an active layer 4 and a second clad layer 5. In this semiconductor laser, the thickness of the second clad layer 5, which is formed at a place other than a light emitting region 17 of the active layer, is made thinner than the thickness of the second clad layer 5, which is formed at a place approximately corresponding to the light emitting region 17. For example, the N-type GaAlAs clad layer 5 formed on the P-type GaAlAs active layer 4 is selectively etched with photoresist and the like as a mask. Thus the place approximately corresponding to the light emitting region 17 is shaped in an inverted V shape. Thus, the heat, which is generated in the vicinity of the light emitting region of the active layer is efficiently dissipated in a heat sink, and the reliability of the semiconductor laser can be improved. |
| 公开日期 | 1988-02-17 |
| 申请日期 | 1986-07-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85258]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | HATA TOSHIO. Semiconductor laser. JP1988036589A. 1988-02-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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