Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | HIRATA SHOJI; HONDA KAZUO; WATABE SHOZO |
| 发表日期 | 1987-07-30 |
| 专利号 | JP1987173786A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a laser of extremely stable single longitudinal mode oscillation by setting the band gap of an absorption layer provided periodically along a light propagating direction for absorbing a light from an active layer to the band gap or less of the active layer. CONSTITUTION:An N-type clad layer 2 and an active layer 3 are sequentially formed on an N-type substrate A block layer 4 for enclosing carrier in the layer 3 is formed on the layer 3, and a guide layer 5 for introducing a light from the layer 3 to a diffraction grating 7 is formed on the layer 4. Then, after a GaAs layer having a band gap equal to or smaller than that of the layer 3 is formed, a diffraction grating 7 and periodically divided absorption layers 6 are formed by a holographic exposure method. Then, after a clad layer 8 having a refractive index smaller than that of the layer 5 is formed, an electrode 10 is formed through a cap layer 9, and other electrode 11 is formed on the back surface of the substrate With this structure, a single mode oscillation near a black wavelength can be performed. |
| 公开日期 | 1987-07-30 |
| 申请日期 | 1986-01-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85259]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | HIRATA SHOJI,HONDA KAZUO,WATABE SHOZO. Distributed feedback type semiconductor laser. JP1987173786A. 1987-07-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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