Semiconductor body and light emitting or other device thereon
文献类型：专利
| 作者 | MICHAEL, ETTENBERG; IVAN, LADANY |
| 发表日期 | 1983-06-02 |
| 专利号 | GB2109632A |
| 著作权人 | RCA CORPORATION |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor body and light emitting or other device thereon |
| 英文摘要 | A substrate 14 is overlain by a buffer layer 26 of substantially the same lattice constant, with a barrier layer 24 interposed between the substrate 14 and buffer layer 26, having the same electrical conductivity type as the buffer layer but different lattice constant from both the substrate and buffer layers. Strain is produced in the barrier layer 24 and portions of the substrate 14 and buffer layers 26 to act as a trap for defects and so prolong the life of e.g. a light emitting device 28, 30, 32, fabricated on the buffer layer 26, while keeping the strained region remote from the active region 30 of the device. |
| 公开日期 | 1983-06-02 |
| 申请日期 | 1982-09-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85264]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RCA CORPORATION |
| 推荐引用方式 GB/T 7714 | MICHAEL, ETTENBERG,IVAN, LADANY. Semiconductor body and light emitting or other device thereon. GB2109632A. 1983-06-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。