Semiconductor light emitting device
文献类型：专利
| 作者 | KUMAI TSUGIO |
| 发表日期 | 1986-08-07 |
| 专利号 | JP1986176182A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To obtain a LD provided with a monolithic monitor in which there is no deterioration in laser performances such as a decline of laser output or a change with aging by providing a light accepting element in vertical direction of an active layer through a semiconductor layer whose forbidden band layer is larger than the active layer. CONSTITUTION:A light accepting element is arranged in vertical direction of an active layer 14 through a semiconductor layer 13 whose forbidden band is larger than the active layer 14. For example, on the p-GaAs substrate 11 which is to be p-layer of an PIN diode, an n-GaAs layer 12 of an i-layer of the PIN diode, an n-AlGaAs layer 13 which is to be a clad layer of an LD using an n-layer of the PIN diode commonly, an undoped GaAs layer 14 as an active layer of the LD whose thickness is 2,000Angstrom or under, a p-AlGaAs layer 15 of a clad layer of the LD, a stripe diffusion layer (Zn)16 of the LD, an Au/Zn/Au layer 17 of p-electrode of the PIN diode, an Au/AuGe layer 18 of n-electrode used commonly by the LD and PIN diode, an Au/AuZn layer 19 of p-electrode of the LD and PIN diode are arranged thereby composing the LD provided with a monolithic monitor. |
| 公开日期 | 1986-08-07 |
| 申请日期 | 1985-01-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85265]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KUMAI TSUGIO. Semiconductor light emitting device. JP1986176182A. 1986-08-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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