半導体レーザ素子
文献类型：专利
| 作者 | 山本 三郎; 細田 昌宏; 佐々木 和明; 近藤 正樹 |
| 发表日期 | 1994-10-12 |
| 专利号 | JP1994080868B2 |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ素子 |
| 英文摘要 | PURPOSE:To restrain a threshold current from being distributed ununiformly in a wafer so as to improve a laser device of this design in reproductively, reliability, and mass-productivity by a method wherein the side face of a mesa section is surrounded with a buried layer which prevents carriers in an active layer from diffusing leftward and rightward. CONSTITUTION:A p-GaAlAs clad layer 2, a p-type GaAlAs active layer 3, an n-GaAlAs clad layer 4, and an n-GaAs cover layer 5 are formed on a p-GaAs substrate provided with a stripe-like V-channel groove 21 formed on it. A resist 22 is applied onto the surface of the cover layer 5 so as to form a belt just above the V-channel groove through a photolithograph technique. An etching is performed so far as to reach to the p-GaAs substrate Moreover, the cover layer 5 is removed and an etching is performed so far as to make the n-clad layer 4 exposed. An n-GaAlAs high resistive layer 6, an n-GaAlAs layer 7, a p-GaAlAs layer 8, and an n-GaAs cap layer 9 are grown through a burying growth process. |
| 公开日期 | 1994-10-12 |
| 申请日期 | 1987-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85267]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | 山本 三郎,細田 昌宏,佐々木 和明,等. 半導体レーザ素子. JP1994080868B2. 1994-10-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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