Manufacture of injection laser
文献类型：专利
| 作者 | SUZAKI WATARU; HIRANO RIYOUICHI; SAKAKIBARA YASUSHI |
| 发表日期 | 1984-08-25 |
| 专利号 | JP1984148382A |
| 著作权人 | MITSUBISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of injection laser |
| 英文摘要 | PURPOSE:To reduce the threshold value by forming a stripe groove along a P-N junction formed in an epitaxial growth layer on a semi-insulation crystal substrate, and then growing an epitaxial layer forming a hetero junction in the groove. CONSTITUTION:After epitaxially growing an N-InP layer 22 on the semi-insulation InP crystal substrate 21 having the plane of [100], a P-region 23 is formed by selectively diffusing Zn or Cd down to the substrate 21 with the plane of [110] as the boundary. The V-shaped stripe groove formed by two planes of [111] 24a and 24b is formed by etching, and accordingly the epitaxial grown layer are divided into a P-region and an N-region. An N-InP layer 25, an N- InGaAsP layer 26 serving as an active layer, and an N-InP layer 27 are successively formed in the groove by epitaxial growth. The forbidden band width of the active layer 26 at the center is made narrower than those of regions 22 and 23 and layers 25 and 27 which surround the active layer 26. |
| 公开日期 | 1984-08-25 |
| 申请日期 | 1983-02-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85269]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | SUZAKI WATARU,HIRANO RIYOUICHI,SAKAKIBARA YASUSHI. Manufacture of injection laser. JP1984148382A. 1984-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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